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| Datasheet File OCR Text: |
| PROCESS CPS150 Silicon Controlled Rectifier 25 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization Glass Passivated Mesa 150 x 150 MILS 8.7 MILS 117 x 84 MILS 24 x 24 MILS Al - 45,000A Al/Mo/Ni/Ag - 32,000A GEOMETRY GROSS DIER PER 4 INCH WAFER 466 PRINCIPAL DEVICE TYPES CS220-25M Series CSDD-25M Series 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (4- January 2006) |
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